Inventory:48548
Pricing:
  • 10000 0.05
  • 30000 0.05
  • 50000 0.04

Technical Details

  • Package / Case DO-219AB
  • Mounting Type Surface Mount
  • Speed Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr) 1.8 µs
  • Technology Standard
  • Capacitance @ Vr, F 4pF @ 4V, 1MHz
  • Current - Average Rectified (Io) 700mA
  • Supplier Device Package DO-219AB (SMF)
  • Operating Temperature - Junction -55°C ~ 150°C
  • Voltage - DC Reverse (Vr) (Max) 1000 V
  • Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A
  • Current - Reverse Leakage @ Vr 10 µA @ 1000 V

Related Products


DIODE SIL CARB 600V 19A TO263-2

Inventory: 7184

DIODE GEN PURP 1KV 1A SOD123F

Inventory: 53560

MOSFET N-CH 400V 10A D2PAK

Inventory: 3366

DIODE GEN PURP 1KV 700MA DO219AB

Inventory: 23343

Top