Technical Details

• Package / Case 3-WDFN Exposed Pad
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 260mV @ 400mA, 4A
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2A, 2V
• Frequency - Transition 100MHz
• Supplier Device Package 3-WDFN (2x2)
• Current - Collector (Ic) (Max) 5 A
• Voltage - Collector Emitter Breakdown (Max) 20 V
• Power - Max 875 mW