- Product Model CSD19531Q5AT
- Brand Texas Instruments
- RoHS Yes
- Description MOSFET N-CH 100V 100A 8VSON
- Classification Single FETs, MOSFETs
- 250 1.37
- 500 1.19
- 1250 1.01
- 2500 0.96
- 6250 0.92
Technical Details
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 100A (Ta)
- Rds On (Max) @ Id, Vgs 6.4mOhm @ 16A, 10V
- Power Dissipation (Max) 3.3W (Ta), 125W (Tc)
- Vgs(th) (Max) @ Id 3.3V @ 250µA
- Supplier Device Package 8-VSONP (5x6)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3870 pF @ 50 V
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