- Product Model TPN5900CNH,L1Q
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 150V 9A 8TSON
- Classification Single FETs, MOSFETs
-
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Inventory:5627
Pricing:
- 5000 0.49
- 10000 0.48
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9A (Ta)
- Rds On (Max) @ Id, Vgs 59mOhm @ 4.5A, 10V
- Power Dissipation (Max) 700mW (Ta), 39W (Tc)
- Vgs(th) (Max) @ Id 4V @ 200µA
- Supplier Device Package 8-TSON Advance (3.1x3.1)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 150 V
- Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 75 V
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