Technical Details

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 9A (Ta)
• Rds On (Max) @ Id, Vgs 1.3Ohm @ 4.5A, 10V
• Power Dissipation (Max) 250W (Tc)
• Vgs(th) (Max) @ Id 4V @ 900µA
• Supplier Device Package TO-3P(N)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 900 V
• Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V