- Product Model TK7J90E,S1E
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 900V 7A TO3P
- Classification Single FETs, MOSFETs
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Inventory:1500
Pricing:
- 1 2.6
- 25 2.08
- 100 1.72
- 500 1.45
- 1000 1.23
- 2000 1.17
- 5000 1.13
Technical Details
- Package / Case TO-3P-3, SC-65-3
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 7A (Ta)
- Rds On (Max) @ Id, Vgs 2Ohm @ 3.5A, 10V
- Power Dissipation (Max) 200W (Tc)
- Vgs(th) (Max) @ Id 4V @ 700µA
- Supplier Device Package TO-3P(N)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 900 V
- Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V
