- Product Model TK6A80E,S4X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 800V 6A TO220SIS
- Classification Single FETs, MOSFETs
-
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Inventory:1515
Pricing:
- 1 1.82
- 50 1.46
- 100 1.2
- 500 1.02
- 1000 0.86
- 2000 0.82
- 5000 0.79
- 10000 0.76
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 6A (Ta)
- Rds On (Max) @ Id, Vgs 1.7Ohm @ 3A, 10V
- Power Dissipation (Max) 45W (Tc)
- Vgs(th) (Max) @ Id 4V @ 600µA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V
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