- Product Model TK55S10N1,LQ
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 100V 55A DPAK
- Classification Single FETs, MOSFETs
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Inventory:6803
Pricing:
- 2000 1.25
- 6000 1.2
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 55A (Ta)
- Rds On (Max) @ Id, Vgs 6.5mOhm @ 27.5A, 10V
- Power Dissipation (Max) 157W (Tc)
- Vgs(th) (Max) @ Id 4V @ 500µA
- Supplier Device Package DPAK+
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3280 pF @ 10 V