- Product Model TK33S10N1Z,LQ
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 100V 33A DPAK
- Classification Single FETs, MOSFETs
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Inventory:3373
Pricing:
- 2000 0.67
- 6000 0.65
- 10000 0.63
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 33A (Ta)
- Rds On (Max) @ Id, Vgs 9.7mOhm @ 16.5A, 10V
- Power Dissipation (Max) 125W (Tc)
- Vgs(th) (Max) @ Id 4V @ 500µA
- Supplier Device Package DPAK+
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 10 V