Technical Details

• Package / Case 4-PowerTSFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 520mA (Ta), 12A (Tc)
• Rds On (Max) @ Id, Vgs 360mOhm @ 7.5A, 10V
• Power Dissipation (Max) 8.3W (Ta), 208W (Tc)
• Vgs(th) (Max) @ Id 3.8V @ 250µA
• Supplier Device Package 4-DFN (8x8)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 600 V
• Gate Charge (Qg) (Max) @ Vgs 15.6 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 717 pF @ 100 V