- Product Model TK35N65W,S1F
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 650V 35A TO247
- Classification Single FETs, MOSFETs
-
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Inventory:1505
Pricing:
- 1 7.56
- 30 6.04
- 120 5.4
- 510 4.77
- 1020 4.29
- 2010 4.02
Technical Details
- Package / Case TO-247-3
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 35A (Ta)
- Rds On (Max) @ Id, Vgs 80mOhm @ 17.5A, 10V
- Power Dissipation (Max) 270W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 2.1mA
- Supplier Device Package TO-247
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 300 V