- Product Model TK35A65W,S5X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 650V 35A TO220SIS
- Classification Single FETs, MOSFETs
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Inventory:1513
Pricing:
- 1 6.06
- 50 4.84
- 100 4.33
- 500 3.82
- 1000 3.44
- 2000 3.25
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 35A (Ta)
- Rds On (Max) @ Id, Vgs 80mOhm @ 17.5A, 10V
- Power Dissipation (Max) 50W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 2.1mA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 300 V
