- Product Model TK35A08N1,S4X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 80V 35A TO220SIS
- Classification Single FETs, MOSFETs
-
PDF
Inventory:1503
Pricing:
- 1 1.01
- 50 0.81
- 100 0.64
- 500 0.54
- 1000 0.44
- 2000 0.42
- 5000 0.4
- 10000 0.38
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 35A (Tc)
- Rds On (Max) @ Id, Vgs 12.2mOhm @ 17.5A, 10V
- Power Dissipation (Max) 30W (Tc)
- Vgs(th) (Max) @ Id 4V @ 300µA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 80 V
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 40 V
