- Product Model TK32A12N1,S4X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 120V 32A TO220SIS
- Classification Single FETs, MOSFETs
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Inventory:1600
Pricing:
- 1 1.34
- 50 1.08
- 100 0.85
- 500 0.72
- 1000 0.59
- 2000 0.56
- 5000 0.53
- 10000 0.5
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 32A (Tc)
- Rds On (Max) @ Id, Vgs 13.8mOhm @ 16A, 10V
- Power Dissipation (Max) 30W (Tc)
- Vgs(th) (Max) @ Id 4V @ 500µA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 120 V
- Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 60 V
