- Product Model TK30A06N1,S4X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 60V 30A TO220SIS
- Classification Single FETs, MOSFETs
-
PDF
- 1 0.86
- 50 0.71
- 100 0.52
- 500 0.43
- 1000 0.37
- 2000 0.33
- 5000 0.31
- 10000 0.29
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Rds On (Max) @ Id, Vgs 15mOhm @ 15A, 10V
- Power Dissipation (Max) 25W (Tc)
- Vgs(th) (Max) @ Id 4V @ 200µA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1050 pF @ 30 V
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