- Product Model TK11A65W,S5X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 650V 11.1A TO220SIS
- Classification Single FETs, MOSFETs
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Inventory:1581
Pricing:
- 1 1.43
- 50 1.15
- 100 0.91
- 500 0.77
- 1000 0.63
- 2000 0.59
- 5000 0.56
- 10000 0.55
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 11.1A (Ta)
- Rds On (Max) @ Id, Vgs 390mOhm @ 5.5A, 10V
- Power Dissipation (Max) 35W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 450µA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 650 V
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 300 V
