- Product Model TK100A08N1,S4X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 80V 100A TO220SIS
- Classification Single FETs, MOSFETs
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Inventory:1500
Pricing:
- 1 3.5
- 50 2.78
- 100 2.38
- 500 2.12
- 1000 1.81
- 2000 1.71
- 5000 1.69
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Rds On (Max) @ Id, Vgs 3.2mOhm @ 50A, 10V
- Power Dissipation (Max) 45W (Tc)
- Vgs(th) (Max) @ Id 4V @ 1mA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 80 V
- Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 40 V
