Technical Details

• Package / Case TO-262-3 Full Pack, I2PAK
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 80A (Tc)
• Rds On (Max) @ Id, Vgs 3mOhm @ 60A, 10V
• Power Dissipation (Max) 41.7W (Tc)
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package I2PAKFP (TO-281)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 60 V
• Gate Charge (Qg) (Max) @ Vgs 183 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 11400 pF @ 25 V