Technical Details

• Package / Case DirectFET™ Isometric MD
• Mounting Type Surface Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 38A (Ta), 211A (Tc)
• Rds On (Max) @ Id, Vgs 0.75mOhm @ 50A, 10V
• Power Dissipation (Max) 2.1W (Ta), 63W (Tc)
• Vgs(th) (Max) @ Id 1.1V @ 100µA
• Supplier Device Package DIRECTFET™ MD
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
• Vgs (Max) ±12V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 158 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 8292 pF @ 10 V