Technical Details

• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 320mA (Ta)
• Rds On (Max) @ Id, Vgs 2.5Ohm @ 1A, 12V
• Vgs(th) (Max) @ Id 4.5V @ 1mA
• Drain to Source Voltage (Vdss) 30 V
• Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 15 V