Technical Details

• Package / Case 4-DIP (0.300", 7.62mm)
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 1A (Ta)
• Rds On (Max) @ Id, Vgs 600mOhm @ 600mA, 10V
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package 4-HVMDIP
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 25 V