- Product Model JAN1N5420
- Brand Roving Networks (Microchip Technology)
- RoHS No
- Description DIODE GEN PURP 600V 3A B AXIAL
- Categories Single Diodes
-
PDF
- In Stock 1500
- 1 7.9
Technical Details
- Package / Case B, Axial
- Mounting Type Through Hole
- Speed Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr) 400 ns
- Technology Standard
- Current - Average Rectified (Io) 3A
- Supplier Device Package B, Axial
- Operating Temperature - Junction -65°C ~ 175°C
- Grade Military
- Voltage - DC Reverse (Vr) (Max) 600 V
- Voltage - Forward (Vf) (Max) @ If 1.5 V @ 9 A
- Current - Reverse Leakage @ Vr 1 µA @ 600 V
- Qualification MIL-PRF-19500/411
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status RoHS non-compliant
Related Products
DIODE GEN PURP 200V 1A AXIAL
In Stock: 1531
- 1: 4.43
- 100: 4.12
DIODE GEN PURP 200V 2A AXIAL
In Stock: 1500
DIODE GEN PURP 400V 1A AXIAL
In Stock: 1578
- 1: 4.28
- 100: 3.97
DIODE GEN PURP 400V 2A AXIAL
In Stock: 1500
DIODE A AXIAL
In Stock: 1500
- 1: 11.6
DIODE GEN PURP 600V 3A D-5B
In Stock: 1500
- 1: 9.57
DIODE GEN PURP 400V 2A AXIAL
In Stock: 1500
DIODE GEN PURP 600V 3A B AXIAL
In Stock: 1500
- 1: 9.11
- 100: 8.46
DIODE GEN PURP 600V 4.5A AXIAL
In Stock: 1500
DIODE GEN PURP 600V 3A D-5B
In Stock: 1659
- 1: 12.6
- 100: 11.7
