- Product Model TRS12E65C,S1Q
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description DIODE SIL CARB 650V 12A TO220-2L
- Classification Single Diodes
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Inventory:1500
Technical Details
- Package / Case TO-220-2
- Mounting Type Through Hole
- Speed No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr) 0 ns
- Technology SiC (Silicon Carbide) Schottky
- Capacitance @ Vr, F 65pF @ 650V, 1MHz
- Current - Average Rectified (Io) 12A
- Supplier Device Package TO-220-2L
- Operating Temperature - Junction 175°C (Max)
- Voltage - DC Reverse (Vr) (Max) 650 V
- Voltage - Forward (Vf) (Max) @ If 1.7 V @ 12 A
- Current - Reverse Leakage @ Vr 90 µA @ 170 V