Technical Details

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 11A (Tc)
• Rds On (Max) @ Id, Vgs 11mOhm @ 5.5A, 10V
• Power Dissipation (Max) 700mW (Ta), 19W (Tc)
• Vgs(th) (Max) @ Id 2.3V @ 100µA
• Supplier Device Package 8-TSON Advance (3.1x3.1)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 15 V