Technical Details

• Package / Case 4-VSFN Exposed Pad
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)
• Rds On (Max) @ Id, Vgs 380mOhm @ 4.9A, 10V
• Power Dissipation (Max) 88.3W (Tc)
• Vgs(th) (Max) @ Id 3.7V @ 500µA
• Supplier Device Package 4-DFN-EP (8x8)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 600 V
• Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 300 V