- Product Model TK10Q60W,S1VQ
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 600V 9.7A IPAK
- Classification Single FETs, MOSFETs
-
PDF
Inventory:1575
Pricing:
- 1 2.83
- 75 2.28
- 150 1.87
- 525 1.58
- 1050 1.34
- 2025 1.28
- 5025 1.23
Technical Details
- Package / Case TO-251-3 Stub Leads, IPAK
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)
- Rds On (Max) @ Id, Vgs 430mOhm @ 4.9A, 10V
- Power Dissipation (Max) 80W (Tc)
- Vgs(th) (Max) @ Id 3.7V @ 500µA
- Supplier Device Package IPAK
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 300 V