- Product Model TK39A60W,S4VX
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 600V 38.8A TO220SIS
- Classification Single FETs, MOSFETs
-
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Inventory:1554
Pricing:
- 1 9.1
- 50 7.26
- 100 6.5
- 500 5.73
- 1000 5.16
- 2000 4.88
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 38.8A (Ta)
- Rds On (Max) @ Id, Vgs 65mOhm @ 19.4A, 10V
- Power Dissipation (Max) 50W (Tc)
- Vgs(th) (Max) @ Id 3.7V @ 1.9mA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 300 V
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