- Product Model APTGT75A1202G
- Brand Microsemi Corporation
- RoHS No
- Description IGBT MODULE 1200V 110A 357W SP2
- Classification IGBT Modules
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Inventory:1500
Technical Details
- Package / Case SP2
- Mounting Type Chassis Mount
- Input Standard
- Configuration Half Bridge
- Operating Temperature -40°C ~ 150°C (TJ)
- Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
- NTC Thermistor No
- Supplier Device Package SP2
- IGBT Type Trench Field Stop
- Current - Collector (Ic) (Max) 110 A
- Voltage - Collector Emitter Breakdown (Max) 1200 V
- Power - Max 357 W
- Current - Collector Cutoff (Max) 50 µA
- Input Capacitance (Cies) @ Vce 5.34 nF @ 25 V