- Product Model APTGT50DH120T3G
- Brand Microsemi Corporation
- RoHS No
- Description IGBT MODULE 1200V 75A 277W SP3
- Classification IGBT Modules
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Inventory:1500
Technical Details
- Package / Case SP3
- Mounting Type Chassis Mount
- Input Standard
- Configuration Asymmetrical Bridge
- Operating Temperature -40°C ~ 150°C (TJ)
- Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
- NTC Thermistor Yes
- Supplier Device Package SP3
- IGBT Type Trench Field Stop
- Current - Collector (Ic) (Max) 75 A
- Voltage - Collector Emitter Breakdown (Max) 1200 V
- Power - Max 277 W
- Current - Collector Cutoff (Max) 250 µA
- Input Capacitance (Cies) @ Vce 3.6 nF @ 25 V