- Product Model SSM3J304T(TE85L,F)
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS No
- Description MOSFET P-CH 20V 2.3A TSM
- Classification Single FETs, MOSFETs
Inventory:1500
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
- Rds On (Max) @ Id, Vgs 127mOhm @ 1A, 4V
- Power Dissipation (Max) 700mW (Ta)
- Supplier Device Package TSM
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
- Vgs (Max) ±8V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 4 V
- Input Capacitance (Ciss) (Max) @ Vds 335 pF @ 10 V