Technical Details

• Package / Case 10-SIP
• Mounting Type Through Hole
• Transistor Type 2 NPN, 2 PNP (H-Bridge)
• Operating Temperature 150°C (TJ)
• Power - Max 4W
• Current - Collector (Ic) (Max) 3A
• Voltage - Collector Emitter Breakdown (Max) 60V
• Vce Saturation (Max) @ Ib, Ic 1V @ 200mA, 2A
• Current - Collector Cutoff (Max) 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 1A, 4V
• Supplier Device Package 10-SIP