- Product Model CSD25213W10
- Brand Texas Instruments
- RoHS Yes
- Description MOSFET P-CH 20V 1.6A 4DSBGA
- Classification Single FETs, MOSFETs
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Inventory:17089
Pricing:
- 3000 0.1
- 6000 0.1
- 9000 0.09
- 30000 0.09
- 75000 0.08
Technical Details
- Package / Case 4-UFBGA, DSBGA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
- Rds On (Max) @ Id, Vgs 47mOhm @ 1A, 4.5V
- Power Dissipation (Max) 1W (Ta)
- Vgs(th) (Max) @ Id 1.1V @ 250µA
- Supplier Device Package 4-DSBGA (1x1)
- Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
- Vgs (Max) -6V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 2.9 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 478 pF @ 10 V