Technical Details

• Package / Case 3-XFDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 5.5A (Ta)
• Rds On (Max) @ Id, Vgs 32mOhm @ 4A, 4.5V
• Power Dissipation (Max) 700mW (Ta)
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package DFN2015H4-3
• Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
• Vgs (Max) ±8V
• Drain to Source Voltage (Vdss) 12 V
• Gate Charge (Qg) (Max) @ Vgs 23.7 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds 1291 pF @ 10 V