Technical Details

• Package / Case TO-220-3
• Mounting Type Through Hole
• Operating Temperature 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 29A (Tc)
• Rds On (Max) @ Id, Vgs 156mOhm @ 10A, 18V
• Power Dissipation (Max) 165W (Tc)
• Vgs(th) (Max) @ Id 4V @ 3.3mA
• Supplier Device Package TO-220AB
• Drive Voltage (Max Rds On, Min Rds On) 18V
• Vgs (Max) +22V, -6V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 61 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 500 V