Technical Details

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 21A (Tc)
• Rds On (Max) @ Id, Vgs 11mOhm @ 21A, 10V
• Power Dissipation (Max) 1.5W (Ta)
• Supplier Device Package 8-HWSON (3.3x3.3)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1760 pF @ 10 V