- Product Model PMT760EN,115
- Brand NXP Semiconductors
- RoHS Yes
- Description MOSFET N-CH 100V 900MA SOT223
- Classification Single FETs, MOSFETs
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Inventory:1500
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 900mA (Ta)
- Rds On (Max) @ Id, Vgs 950mOhm @ 800mA, 10V
- Power Dissipation (Max) 800mW (Ta), 6.2W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package SC-73
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 3 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 160 pF @ 80 V