- Product Model TK6Q60W,S1VQ
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 600V 6.2A IPAK
- Classification Single FETs, MOSFETs
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Inventory:1536
Pricing:
- 1 1.92
- 75 1.54
- 150 1.27
- 525 1.07
- 1050 0.91
- 2025 0.87
- 5025 0.83
- 10050 0.81
Technical Details
- Package / Case TO-251-3 Stub Leads, IPAK
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 6.2A (Ta)
- Rds On (Max) @ Id, Vgs 820mOhm @ 3.1A, 10V
- Power Dissipation (Max) 60W (Tc)
- Vgs(th) (Max) @ Id 3.7V @ 310µA
- Supplier Device Package IPAK
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 300 V
