Technical Details

• Package / Case TO-247-3
• Mounting Type Through Hole
• Operating Temperature 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• Current - Continuous Drain (Id) @ 25°C 100A (Tc)
• Rds On (Max) @ Id, Vgs 25mOhm @ 50A
• Power Dissipation (Max) 583W (Tc)
• Supplier Device Package TO-247AB
• Drain to Source Voltage (Vdss) 1200 V
• Input Capacitance (Ciss) (Max) @ Vds 7209 pF @ 800 V