- Product Model SIHB33N60E-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET N-CH 600V 33A D2PAK
- Classification Single FETs, MOSFETs
-
PDF
- 1 5.94
- 10 4.99
- 100 4.04
- 500 3.59
- 1000 3.07
- 2000 2.89
Technical Details
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 33A (Tc)
- Rds On (Max) @ Id, Vgs 99mOhm @ 16.5A, 10V
- Power Dissipation (Max) 278W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-263 (D2PAK)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3508 pF @ 100 V
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