- Product Model SI2365EDS-T1-GE3
- Brand Vishay / Siliconix
- RoHS Yes
- Description MOSFET P-CH 20V 5.9A TO236
- Classification Single FETs, MOSFETs
-
PDF
Inventory:32925
Pricing:
- 3000 0.09
- 6000 0.08
- 9000 0.07
- 30000 0.07
- 75000 0.06
- 150000 0.06
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 5.9A (Tc)
- Rds On (Max) @ Id, Vgs 32mOhm @ 4A, 4.5V
- Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
- Vgs(th) (Max) @ Id 1V @ 250µA
- Supplier Device Package SOT-23-3 (TO-236)
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
- Vgs (Max) ±8V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 36 nC @ 8 V
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