Technical Details

• Package / Case TO-262-3 Full Pack, I2PAK
• Mounting Type Through Hole
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 18A (Tc)
• Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V
• Power Dissipation (Max) 130W (Tc)
• Vgs(th) (Max) @ Id 5V @ 250µA
• Supplier Device Package TO-281 (I2PAKFP)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±25V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1345 pF @ 100 V