- Product Model SSM6J215FE(TE85L,F
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET P CH 20V 3.4A ES6
- Classification Single FETs, MOSFETs
-
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Inventory:1500
Pricing:
- 4000 0.11
- 8000 0.1
- 12000 0.09
- 28000 0.09
- 100000 0.08
Technical Details
- Package / Case SOT-563, SOT-666
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 3.4A (Ta)
- Rds On (Max) @ Id, Vgs 59mOhm @ 3A, 4.5V
- Power Dissipation (Max) 500mW (Ta)
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package ES6
- Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
- Vgs (Max) ±8V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 10.4 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 630 pF @ 10 V
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