- Product Model TK8A60W,S4VX
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 600V 8A TO220SIS
- Classification Single FETs, MOSFETs
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Inventory:1543
Pricing:
- 1 2.49
- 50 2
- 100 1.64
- 500 1.39
- 1000 1.18
- 2000 1.12
- 5000 1.08
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 8A (Ta)
- Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V
- Power Dissipation (Max) 30W (Tc)
- Vgs(th) (Max) @ Id 3.7V @ 400µA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 18.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 300 V