Technical Details

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 61.8A (Ta)
• Rds On (Max) @ Id, Vgs 38mOhm @ 30.9A, 10V
• Power Dissipation (Max) 400W (Tc)
• Vgs(th) (Max) @ Id 3.7V @ 3.1mA
• Supplier Device Package TO-3P(N)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 600 V
• Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 6500 pF @ 300 V