- Product Model TK31A60W,S4VX
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 600V 30.8A TO220SIS
- Classification Single FETs, MOSFETs
-
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Inventory:1547
Pricing:
- 1 7.19
- 50 5.74
- 100 5.13
- 500 4.53
- 1000 4.08
- 2000 3.82
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
- Rds On (Max) @ Id, Vgs 88mOhm @ 15.4A, 10V
- Power Dissipation (Max) 45W (Tc)
- Vgs(th) (Max) @ Id 3.7V @ 1.5mA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
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