- Product Model TK10P60W,RVQ
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N CH 600V 9.7A DPAK
- Classification Single FETs, MOSFETs
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Inventory:6000
Pricing:
- 2000 1.28
- 6000 1.23
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)
- Rds On (Max) @ Id, Vgs 430mOhm @ 4.9A, 10V
- Power Dissipation (Max) 80W (Tc)
- Vgs(th) (Max) @ Id 3.7V @ 500µA
- Supplier Device Package DPAK
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 300 V