- Product Model TK6A60W,S4VX
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 600V 6.2A TO220SIS
- Classification Single FETs, MOSFETs
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Inventory:1545
Pricing:
- 1 2.1
- 50 1.69
- 100 1.39
- 500 1.18
- 1000 1
- 2000 0.95
- 5000 0.91
- 10000 0.91
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 6.2A (Ta)
- Rds On (Max) @ Id, Vgs 750mOhm @ 3.1A, 10V
- Power Dissipation (Max) 30W (Tc)
- Vgs(th) (Max) @ Id 3.7V @ 310µA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 390 pF @ 300 V