Technical Details

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 30A (Tc)
• Rds On (Max) @ Id, Vgs 125mOhm @ 15A, 10V
• Power Dissipation (Max) 227.2W (Tc)
• Supplier Device Package TO-3PSG
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) +30V, -20V
• Drain to Source Voltage (Vdss) 600 V
• Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 25 V