Technical Details

• Package / Case TO-220-3
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 120A (Tc)
• Rds On (Max) @ Id, Vgs 3.3mOhm @ 70A, 10V
• Power Dissipation (Max) 99W (Tc)
• Vgs(th) (Max) @ Id 3.9V @ 100µA
• Supplier Device Package TO-220AB
• Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3183 pF @ 25 V