Technical Details

• Speed No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr) 0 ns
• Technology SiC (Silicon Carbide) Schottky
• Capacitance @ Vr, F 1135pF @ 0V, 1MHz
• Current - Average Rectified (Io) 68A
• Operating Temperature - Junction -55°C ~ 150°C
• Voltage - DC Reverse (Vr) (Max) 1200 V
• Voltage - Forward (Vf) (Max) @ If 1.8 V @ 20 A
• Current - Reverse Leakage @ Vr 400 µA @ 1200 V